While TSMC's 3nm architecture has yet to be adopted by the company for its chip manufacturing process, Samsung just announced that it has already started producing chipsets based on its 3nm process technology with GAA architecture. With the start of manufacturing, Samsung has successfully beaten the Taiwanese chipmaker by becoming the first semiconductor company to adopt the 3nm node. Here are the details!

Samsung recently shared an official Newsroom post to announce the first production of its 3nm process node with Gate-All-Around (GAA) architecture. The company says the 3nm node along with the Multi-Bridge Channel FET (MBCFET) GAA architecture "defies the performance limitations of FinFET, improving current efficiency by reducing the supply voltage level, while improving performance by increasing drive current capability."

Samsung also highlights that the new manufacturing process offers a 45% improvement in energy efficiency, 23% improvement in performance and 16% reduction in chip area compared to its previous 5nm process. Going forward, the company aims to increase performance by 30% and reduce power consumption and size by 50% and 35%, respectively.

"Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation manufacturing technologies, such as the foundry industry's first High-K Metal Gate, FinFET, as well as EUV. We aim to continue this leadership with the world's first 3nm process with MBCFET We will continue to actively innovate in competitive technology development and build processes that help accelerate the achievement of technology maturity, said Dr. Siyoung Choi, CEO and Head of Foundry Operations at Samsung.