The majority carriers in a p-type semiconductor are holes. In an n-type semiconductor, pentavalent impurity from the V group is added to the pure semiconductor. The pentavalent impurities provide extra electrons and are termed as donor atoms. Electrons are the majority charge carriers in n-type semiconductors.

When a trivalent impurity is added, the semiconductor is termed as P-type whereas it is called N-type if the pentavalent impurity is added. Impurities such as Arsenic, Antimony, Phosphorous and Bismuth (elements having five valence electrons) are added in N-type semiconductors.

N-type materials are type of materials formed by adding group 5 elements (pentavalent impurity atoms) to the semiconductor crystals and conduct the electric current by movement of electrons.

In silicon doping, there are two types of impurities: n-type and p-type. In n-type doping, arsenic or phosphorus is added in small quantities to the silicon. In p-type doping, boron or gallium is used as the dopant. These elements each have three electrons in their outer orbitals.

The n-type tends is a better choice due to reducing LID (Light Induced Degradation) & increase durability and performance compared to p-type. p-type: However, in p-type semiconductor or 3 valence electrons impurities doped in silicon, remained one hole, deficiency of electrons in the valence band of the semiconductor.

The easiest would be judging form the periodic table. If the dopant has more electrons in the outer shell than the semiconductor material, it’s going to be n-type, and with less electrons in the outer shell, it’s p-type. At least for Group IV semiconductors (Si, Ge).

An n-type semiconductor results from implanting dopant atoms that have more electrons in their outer (bonding) shell than silicon. The resulting semiconductor crystal contains excess, or free, electrons that are available for conducting current. A p-type semiconductor results from implanting dopant atoms…

In a p-type semiconductor, the majority carriers are holes, and the minority carriers are electrons. In the n-type semiconductor, electrons are majority carriers, and holes are minority carriers.

p-n junction diodes are made up of two adjacent pieces of p-type and n-type semiconducting materials. p-type and n-type materials are simply semiconductors, such as silicon (Si) or germanium (Ge), with atomic impurities; the type of impurity present determines the type of the semiconductor.

Why is N type preferred over P type? since electron has high mobility compared to hole, conductivity of n-type semiconductor material is greater than p-type semiconductor.

In the component point of view it can be explained by the electron mobility versus the role mobility. The electron mobility is 1400 cm2/ (V·s) and the hole mobility is around 450 cm2/ (V·s) so the n-type based component is faster than p-type.

The easiest would be judging form the periodic table. If the dopant has more electrons in the outer shell than the semiconductor material, it’s going to be n-type, and with less electrons in the outer shell, it’s p-type.

P-type semiconductor and N-type semiconductor acts as a resistor but by doing one side of silicon crystal with a p-type impurity and the other side by the n-type impurity, we can convert the silicon crystal into PN junction. And that junction has a border where the p-type and n-type region meets.

The basic construction of the diode we use is just diffusion and the well or substrate. Therefore, for P type devices (like P channel transistor) we use P type diode and N type diode for N type devices. For the other type of antenna diode I mentioned, usually we use N type diode for simplicity when we are already using P+ as the substrate.

A PN-junction is formed when an n- and p-type material is fused together to create a semiconductor diode. Everything comes down to the p-n junction. N-type silicon has extra electrons and there are atoms on the p-side that need electrons, so electrons migrate across the junction.

The most commonly used semiconductor diodes are the p-n junction diodes. p-n junction diodes are made by fusing p-type and n-type semiconductors. When both the semiconductors are fused a potential barrier voltage is created across the junction.